View APTM50AM24S_1167475.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTM50AM24S
Phase leg Series & parallel diodes MOSFET Power Module
VDSS = 500V RDSon = 24m max @ Tj = 25C ID = 150A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * Benefits * * * *
G1 S1
VBUS
0/VBUS
OUT
S2 G2
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50AM24S - Rev 1
June, 2004
Tc = 25C
Max ratings 500 150 110 600 30 24 1250 24 30 1300
Unit V A V m W A
APTM50AM24S
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V, ID = 1.5mA Min 500
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V T j = 25C
Tj = 125C
Typ
Max 500 3 24 5 500
VGS = 10V, ID = 75A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 150A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 150A R G = 0.8
3
Unit V A mA m V nA Unit nF
Dynamic Characteristics
Min
Typ 19.6 4.2 0.3 434 120 216 10 17 50 41
Max
nC
ns
Series diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s IF = 120A VR = 133V di/dt = 400A/s Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt = 400A/s IF = 120A VR = 400V di/dt = 400A/s
Min Tc = 85C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 120 1.1 1.4 0.9 31 60 120 500
Max 1.15
Unit A V
ns nC
Parallel diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
Min Tc = 70C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
130 170 440 1840
ns nC
APT website - http://www.advancedpower.com
2-6
APTM50AM24S - Rev 1
June, 2004
Typ 120 1.6 1.9 1.4
Max 1.8
Unit A V
APTM50AM24S
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Diode serie Diode parallel 2500 -40 -40 -40 3 2 Min Typ Max 0.10 0.46 0.46 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50AM24S - Rev 1
June, 2004
APTM50AM24S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 600 I D, Drain Current (A) 480 360 240 120 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 75A
Transfert Characteristics
480
I D, Drain Current (A) VGS=10&15V 8V 7.5V 7V 6.5V 6V 5.5V 25
420 360 300 240 180 120 60 0 0
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
TJ =25C TJ =125C TJ=-55C
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 160
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0
VGS=10V
120 80
VGS=20V
40
0 60 120 180 240 300 360 25 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (C) 150
June, 2004
APT website - http://www.advancedpower.com
4-6
APTM50AM24S - Rev 1
APTM50AM24S
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 ID, Drain Current (A)
limited by R DSon
ON resistance vs Temperature
VGS=10V ID=75A
1.1
1.0
0.9
0.8 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2
VGS (TH), Threshold Voltage (Normalized)
100s
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage
100
limited by RDSon
1ms 10 Single pulse TJ =150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms
100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600
VDS=400V
1000 Crss 100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
5-6
APTM50AM24S - Rev 1
June, 2004
APTM50AM24S
Delay Times vs Current 60 50 t d(on) and td(off) (ns)
V DS =333V RG =0.8 T J=125C L=100H
Rise and Fall times vs Current 80
VDS=333V RG=0.8 TJ=125C L=100H
30 20 10 0 30
t r and tf (ns)
40
td(off)
60
tf
40
td(on)
20
tr
0 80 130 180 230 ID, Drain Current (A) 280 30 80 130 180 230 280 I D, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 6 4 2 0
VDS=333V ID=150A TJ=125C L=100H
Switching Energy vs Current 7 Switching Energy (mJ) 6 5 4 3 2 1 0 30 80 130 180 230 280 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 600 500 Frequency (kHz) 400 300 200 100 0 30 60 90 120 150 ID, Drain Current (A)
VDS=333V D=50% RG=0.8 T J=125C VDS=333V RG=0.8 T J=125C L=100H
Eon
Eoff
Eon
Eoff
0
1
2
3
4
5
6
7
8
9
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage TJ =150C 100 TJ=25C 10
1000
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
June, 2004
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM50AM24S - Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein

▲Up To Search▲

Price & Availability of APTM50AM24S

	To Download APTM50AM24S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .